US Patent Issued to SHIN-ETSU HANDOTAI on Sept. 22 for "Method of cleaning silicon wafer, method of manufacturing silicon wafer, and silicon wafer" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,582, issued on Sept. 22, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Method of cleaning silicon wafer, method of manufacturing silicon wafer, and silicon wafer" was invented by Kota Fujii (Nishigo-mura, Japan) and Tatsuo Abe (Shirakawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of cleaning a silicon wafer in which the silicon wafer is roughened, including: forming an oxide film on the silicon wafer by SC1 cleaning, SC2 cleaning, or ozone water cleaning; cleaning the silicon wafer on which the oxide film is formed by using any one of: a diluted aqueous solution of ammonium hydroxide having an ammonium hydroxide concentr...