US Patent Issued to SHIN-ETSU HANDOTAI on Nov. 3 for "Method for growing diamond layer and microwave plasma CVD apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,338, issued on Nov. 3, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Method for growing diamond layer and microwave plasma CVD apparatus" was invented by Tsuyoshi Ohtsuki (Annaka, Japan), Atsushi Suzuki (Nishigo-mura, Japan), Toshiki Matsubara (Nishigo-mura, Japan), Katsuyoshi Suzuki (Takasaki, Japan) and Tatsuo Abe (Shirakawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is a method for growing a diamond layer by a microwave plasma CVD method, including: a step of placing a substrate 2 in a reaction vessel 1 of a microwave plasma CVD apparatus 10; a step of introducing a raw material gas (reaction gas) 6 into th...