US Patent Issued to SHIN-ETSU HANDOTAI on March 17 for "Method for manufacturing epitaxial wafer for ultraviolet ray emission device, method for manufacturing substrate for ultra violet ray emission device, epitaxial wafer for ultraviolet ray emission device, and substrate for ultraviolet ray emission device" (Japanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,771, issued on March 17, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Method for manufacturing epitaxial wafer for ultraviolet ray emission device, method for manufacturing substrate for ultra violet ray emission device, epitaxial wafer for ultraviolet ray emission device, and substrate for ultraviolet ray emission device" was invented by Keitaro Tsuchiya (Takasaki, Japan) and Masato Yamada (Chiyoda-ku, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is a method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method including steps of: preparing a supporting substrate having at le...