ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,704,780, issued on Aug. 11, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).
"Resist material and patterning process" was invented by Jun Hatakeyama (Joetsu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A resist material for use in a patterning process includes a base polymer and an acid generator, where the resist material contains, as the acid generator, a sulfonium salt or iodonium salt of a sulfonic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop an acid generator that makes it possible to reduce LWR of line patterns and critical dimension unifor...