US Patent Issued to SHIN-ETSU CHEMICAL, SHIN-ETSU HANDOTAI on May 5 for "Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,172, issued on May 5, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo) and SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing same" was invented by Yoshihiro Kubota (Gunma, Japan) and Ippei Kubono (Gunma, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A seed substrate for epitaxial growth has a support substrate, a planarizing layer of 0.5 to 3 micro metre provided on the top surface of the support substrate, and a seed crystal layer provided on the top surface of the planarizing layer. The support substrate includes a core o...