US Patent Issued to Shenzhen Newsonic Technologies on May 19 for "Film bulk acoustic resonator structure and fabricating method" (Chinese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,633,900, issued on May 19, was assigned to Shenzhen Newsonic Technologies Co. Ltd. (Shenzhen, China).

"Film bulk acoustic resonator structure and fabricating method" was invented by Jian Wang (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, a bottom electrode disposed below the piezoelectric layer, and a top electrode disposed above the piezoelectric layer. Portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack. The FBAR s...