US Patent Issued to Shenzhen Newsonic Technologies on June 23 for "Lithium niobate or lithium tantalate FBAR structure and fabricating method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,566, issued on June 23, was assigned to Shenzhen Newsonic Technologies Co. Ltd. (Shenzhen, China).

"Lithium niobate or lithium tantalate FBAR structure and fabricating method thereof" was invented by Jian Wang (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film bulk acoustic resonator (FBAR) structure includes, a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including lithium niobate or lithium tantalate, a bottom electrode disposed below the piezoelectric layer, and a top electrode disposed above the piezoelectric layer. Portions of the bottom electrode, the piezoelectric layer,...