ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,808, issued on Feb. 24, was assigned to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY Co. LTD. (Shenzhen, China).

"Thin film transistor and manufacturing method thereof" was invented by Yuanpeng Chen (Shenzhen, China) and Yuanjun Hsu (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a thin film transistor and a manufacturing method thereof. A substrate, an active layer, a first insulating layer, and a gate electrode are stacked and disposed in sequence, the second insulating layer is disposed on the substrate and covers the active layer, the first insulating layer, and the gate el...