US Patent Issued to Shanghai WUQI Microelectronics on Sept. 29 for "Fully integrated CMOS multiple MOSFET-stacked double push-pull RF power amplifier" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,750,012, issued on Sept. 29, was assigned to Shanghai WUQI Microelectronics Co. Ltd. (Shanghai).

"Fully integrated CMOS multiple MOSFET-stacked double push-pull RF power amplifier" was invented by Qiang Gu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "An amplification circuit for RF power amplifiers is provided. The circuit includes two PMOS amplification modules and two NMOS amplification modules; each module includes a CSCG structure composed of a stack of K transistors. The first PMOS module and the first NMOS module are connected in series between a supply voltage and ground; gates of main amplification transistors of the first PMOS modu...