US Patent Issued to Shanghai Tianma Microelectronics on June 9 for "Photosensitive transistor, method for manufacturing a photosensitive transistor, and microfluidic chip" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,868, issued on June 9, was assigned to Shanghai Tianma Microelectronics Co. Ltd. (Shanghai).

"Photosensitive transistor, method for manufacturing a photosensitive transistor, and microfluidic chip" was invented by Linzhi Wang (Shanghai), Kerui Xi (Shanghai), Kaidi Zhang (Shanghai), Shun Gong (Shanghai) and Yukun Huang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photosensitive transistor includes a substrate and a first semiconductor layer, a first gate, a first electrode, a second electrode and a second semiconductor layer which are located on a side of the substrate. The first semiconductor layer includes a first doped region, a secon...