US Patent Issued to SHANGHAI IC R&D CENTER on April 14 for "Memory and reading, writing and erasing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,130, issued on April 14, was assigned to SHANGHAI IC R&D CENTER Co. LTD. (Shanghai).

"Memory and reading, writing and erasing methods thereof" was invented by Lingyi Guo (Shanghai) and Xueru Yu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory and reading, writing and erasing methods thereof. The memory includes: H memory planes arranged in parallel along a first direction, where each memory plane extends in a second direction, and includes M columns of memory strings; each column of memory string extends in a third direction; the first direction, the second direction and the third direction are all different, andM are integers grea...