US Patent Issued to Shanghai Huali Microelectronics on May 19 for "Testing structure and testing method for locating source of plasma damage" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,631,680, issued on May 19, was assigned to Shanghai Huali Microelectronics Corp. (Shanghai).

"Testing structure and testing method for locating source of plasma damage" was invented by Yekai Zhu (Shanghai), Yueqin Zhu (Shanghai) and Ke Zhou (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "This application discloses a testing structure for locating a source of a plasma damage. A testing substructure corresponding to a selected metal layer includes a first MOS transistor, a first gate lead, a first antenna and a monitoring gate pad. The first gate lead is composed of a metal wire of the selected metal layer. The first antenna is connected with the ...