US Patent Issued to Shanghai Huali Integrated Circuit on Sept. 15 for "Process method for improving SRAM operating speed" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,740,038, issued on Sept. 15, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Process method for improving SRAM operating speed" was invented by Yuan Yuan (Shanghai), Zhi Tian (Shanghai), Feng Ji (Shanghai) and Tao Liu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method making a SRAM includes forming a low voltage region, a medium voltage region, and a high voltage region in an active region; forming a low voltage PMOS active region and a low voltage NMOS active region in the low voltage region; forming an STI region between the low voltage PMOS active region and the low voltage NMOS active region; covering the SRAM st...