ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,151, issued on March 17, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).
"Method for preparing TEM sample" was invented by Qiang Chen (Shanghai), Liu Chen (Shanghai) and Jinde Gao (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for preparing a TEM sample, comprising: step 1, step 1, providing a chip sample having a metal protective layer formed on a first surface; step 2, fixing the chip sample on a sample table of a FIB system; step 3, performing the first time of FIB cutting on the metal protective layer along a first direction, so as to form a groove, wherein the first direc...