ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,657, issued on June 23, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Super flash and method for manufacturing same" was invented by Qin Sun (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The application discloses a super flash including: a first gate trench formed at the top of a source region, wherein a floating gate and a control gate are formed in the first gate trench. A second nitrogen oxide layer and a first oxide layer are formed between a first side surface of the floating gate and side and bottom surfaces of the first gate trench. A third nitrogen oxide layer and a fourth oxide layer are formed between a se...