US Patent Issued to Shanghai Huali Integrated Circuit on Feb. 24 for "Method for fabricating fully depleted silicon-on-insulator PMOS devices" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,805, issued on Feb. 24, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for fabricating fully depleted silicon-on-insulator PMOS devices" was invented by Siyuan Che (Shanghai), Xiangguo Meng (Shanghai) and Lian Lu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for fabricating fully depleted silicon-on-insulator PMOS devices, the method includes sequentially forming a polysilicon layer and a hard mask oxide layer on an FDSOI substrate structure; etching to a SiGe layer by using the hard mask oxide layer as a mask to form a PMOS gate stack structure; sequentially depositi...