US Patent Issued to Shanghai Huali Integrated Circuit on Feb. 24 for "Backside illuminated CMOS image sensor and method of making the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,853, issued on Feb. 24, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Backside illuminated CMOS image sensor and method of making the same" was invented by Xiang Peng (Shanghai), Haoyu Chen (Shanghai) and Feng Ji (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a backside illuminated CMOS image sensor and a method of making the same. The backside illuminated CMOS image sensor comprises: a pixel region substrate, an isolation structure, a first dielectric layer, a metal grid, and second dielectric layer, wherein grid trenches and a metal plug are formed in the pixel region substrate, the...