US Patent Issued to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Split-gate memory array and method for operating same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,646, issued on Sept. 8, was assigned to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Corp. (Shanghai).

"Split-gate memory array and method for operating same" was invented by Ning Wang (Shanghai) and Kegang Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A split-gate memory array and a method for operating same. The array comprises: a memory array including a plurality of memory cell groups, each memory cell group comprising a first memory cell and a second memory cell, wherein the first memory cell comprises a first storage transistor and a first selection transistor which are formed by means of a split-gate structure, and the ...