US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Sept. 8 for "Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance and methods for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,201, issued on Sept. 8, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (Shanghai).

"Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance and methods for fabricating same" was invented by Lei Shi (Shanghai), Jian Wu (Shanghai), Hang Fan (Shanghai), Luyao Song (Shanghai) and Shuming Xu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high-frequency LDMOS device includes a semiconductor substrate of a first conductivity type, a doped drift region of a second conductivity type formed on the substrate, and a body region of the first conductivity type formed in the doped drift region. Source ...