US Patent Issued to Shangai Huali Microelectronics on June 16 for "Double-layer stacked CMOS image sensor" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,356, issued on June 16, was assigned to Shangai Huali Microelectronics Corp. (Shanghai).

"Double-layer stacked CMOS image sensor" was invented by Xing Fang (Shanghai), Chenchen Qiu (Shanghai), Jun Qian (Shanghai), Chang Sun (Shanghai) and Zhengying Wei (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a double-layer stacked CMOS image sensor, photo diode and transfer gate transistor of a pixel cell are formed on the first substrate sequentially along a longitudinal direction, and the other pixel transistors of the pixel cell are formed on the second substrate. The first substrate and the second substrate are ...