ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,674, issued on April 21, was assigned to Seoul Viosys Co. Ltd. (Gyeonggi-do, South Korea).
"Deep ultraviolet light-emitting diode" was invented by Tae Gyun Kim (Gyeonggi-do, South Korea), June Sik Kwak (Gyeonggi-do, South Korea) and Kyu Ho Lee (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to one embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa which is disposed on the n-type semiconductor layer, comprises an active layer and a p-type semiconductor layer, and has a plura...