US Patent Issued to Seoul National University R&DB foundation on Nov. 3 for "Memory device and manufacturing method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,250, issued on Nov. 3, was assigned to Seoul National University R&DB foundation (Seoul, South Korea).

"Memory device and manufacturing method thereof" was invented by Cheol Seong Hwang (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a manufacturing method of a memory device including forming a structure including an epitaxial material plug extending vertically on a substrate, an epitaxial material layer extending horizontally from a side surface of the epitaxial material plug, and a gate insulating material layer formed at least on a surface of the epitaxial material layer, defining a transistor in...