US Patent Issued to Seoul National University R&DB Foundation on May 12 for "Method for manufacturing strain sensor by control of thin-film crack using stress concentration structure and strain sensor manufactured using same" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,624,938, issued on May 12, was assigned to Seoul National University R&DB Foundation (Seoul, South Korea).

"Method for manufacturing strain sensor by control of thin-film crack using stress concentration structure and strain sensor manufactured using same" was invented by Yongtaek Hong (Seoul, South Korea), Taehoon Kim (Seoul, South Korea) and Daesik Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a strain sensor comprises the steps of: preparing a solution to be used as a conductive thin-film material and a flexible substrate; forming, on the flexible substrate, a stress concentration structure by repeat...