US Patent Issued to Semiconductor Technology (Hangzhou) on Oct. 27 for "Semiconductor device structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,710, issued on Oct. 27, was assigned to Semiconductor Technology (Hangzhou) LTD. (Hangzhou, China).

"Semiconductor device structure and manufacturing method thereof" was invented by Zheng Lv (Hangzhou, China), Xunyi Song (Hangzhou, China) and Chihsen Huang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device structure can include: forming a first gate dielectric layer on a first region of a semiconductor substrate, and forming a second gate dielectric layer on a second region of the semiconductor substrate; forming a conductive layer on the first and second gate dielectric layers; forming a...