US Patent Issued to Semiconductor Manufacturing International (Shanghai) on June 16 for "Semiconductor structure and formation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,276, issued on June 16, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and formation method thereof" was invented by Shiliang Ji (Shanghai) and Cheng Tan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a plurality of gates, a cut isolation structure, and an interlayer dielectric layer. The plurality of gates are formed on the substrate. The plurality of gates extend along a first direction. The cut isolation structure is formed on the substrate. The cut isolation structure passes through the gates in a second direction. A size of...