US Patent Issued to Semiconductor Manufacturing International (Shanghai) on July 14 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,857, issued on July 14, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and fabrication method thereof" was invented by Lijie Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a first isolation layer in the substrate, composite layers over the substrate, and a second isolation layer between adjacent composite layers. Each composite layer includes channel layers, an insulating wall isolating two parts of each channel layer electrically, and a first gate electrode between adjacent channel layers. The second isolation layer penet...