US Patent Issued to Semiconductor Manufacturing International (Shanghai) on Aug. 11 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,708, issued on Aug. 11, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and method for forming same" was invented by Jisong Jin (Shanghai) and Zhankui Zhu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for forming the same are provided. In one form, a semiconductor structure includes: a substrate; a first dielectric layer, located on the substrate; a trench, located in the first dielectric layer; a conductive layer, located on a bottom and a sidewall of the trench and configured as a resistor structure; and a second dielectric layer, config...