US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on March 24 for "Method of etching a semiconductor device by etching initial mask structures at a region having an extension direction different from the extension direction of the initial mask structures" (Chinese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,477, issued on March 24, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Method of etching a semiconductor device by etching initial mask structures at a region having an extension direction different from the extension direction of the initial mask structures" was invented by Zhenyang Zhao (Shanghai) and Shiliang Ji (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for fabricating the semiconductor structure are provided in the present disclosure. The method includes providing a substrate, wh...