US Patent Issued to Semiconductor Manufacturing International (Beijing), Semiconductor Manufacturing International (Shanghai) on Sept. 1 for "Semiconductor structure and forming method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,138, issued on Sept. 1, was assigned to Semiconductor Manufacturing International (Beijing) Corp. (Beijing) and Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and forming method thereof" was invented by Nan Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structure and forming method thereof are provided. The forming method includes: forming a substrate including a power rail region, the power rail region including a first area and a second area, the power rail region having a first fin and a second fin spanning the second area; forming sidewall spacers on sidewall surfaces ...