US Patent Issued to Semiconductor Manufacturing International (Beijing), Semiconductor Manufacturing International (Shanghai) on Aug. 25 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,118, issued on Aug. 25, was assigned to Semiconductor Manufacturing International (Beijing) Corp. (Beijing) and Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and method for forming same" was invented by Bingquan Wang (Beijing), Siriguleng Zhang (Beijing), Dayong Yan (Beijing), Zhigao Wang (Beijing) and Daming Zhang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a first wafer, including a first substrate and a first dielectric layer on the fir...