US Patent Issued to Semiconductor Manufacturing Intemational (Shanghai) on Sept. 1 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,139, issued on Sept. 1, was assigned to Semiconductor Manufacturing Intemational (Shanghai) Corp. (Shanghai).

"Semiconductor structure and fabrication method thereof" was invented by Zhuofan Chen (Shanghai) and Jisong Jin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and its fabrication method are provided. The semiconductor structure includes: a substrate including a base substrate with a first device region and a second device region; a first active region on the first device region and a second active region on the second device region; an isolation layer between the first active region and the second active r...