US Patent Issued to Semiconductor Energy Laboratory on Oct. 27 for "Semiconductor device having a metal oxide and method for manufacturing the semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,853, issued on Oct. 27, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device having a metal oxide and method for manufacturing the semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Tetsuya Kakehata (Isehara, Japan), Yuji Egi (Atsugi, Japan), Yasuhiro Jinbo (Isehara, Japan) and Yujiro Sakurada (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidi...