US Patent Issued to Semiconductor Energy Laboratory on May 19 for "Method for modifying insulating film and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,258, issued on May 19, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Method for modifying insulating film and method for manufacturing semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Fumito Isaka (Zama, Japan), Yoichi Iikubo (Machida, Japan), Yuji Egi (Atsugi, Japan) and Yasuhiro Jinbo (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for modifying an insulating film is provided. The method includes a first step of preparing an insulating film containing hydrogen, and a second step of performing microwave treatment on the insulating film to release the hydrogen in the insula...