ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,633, issued on March 31, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device comprising oxide semiconductor" was invented by Shunpei Yamazaki (Setagaya, Japan), Junichiro Sakata (Atsugi, Japan) and Hiroki Ohara (Sagamihara, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semicon...