US Patent Issued to Semiconductor Energy Laboratory on March 3 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,654, issued on March 3, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Naoto Goto (Tochigi, Japan), Naoki Ikezawa (Tochigi, Japan), Masataka Nakada (Tochigi, Japan), Ami Sato (Tochigi, Japan) and Chieko Misawa (Utsunomiya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer over the semiconductor layer, and a conductive layer ...