ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,628, issued on March 3, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Takayuki Ikeda (Atsugi, Japan), Tatsuya Onuki (Atsugi, Japan), Hitoshi Kunitake (Isehara, Japan) and Yasuhiro Jinbo (Isehara, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device having large memory capacity is provided. A highly reliable memory device is provided. A semiconductor device includes a first conductive layer extending in a first direction, a structure body extending in a second direction intersecting with the first direction, a first insulating layer,...