US Patent Issued to Semiconductor Energy Laboratory on March 24 for "Semiconductor device and method for manufacturing the semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,290, issued on March 24, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Semiconductor device and method for manufacturing the semiconductor device" was invented by Masakatsu Ohno (Utsunomiya, Japan), Masataka Nakada (Tochigi, Japan), Yukinori Shima (Tatebayashi, Japan), Masayoshi Dobashi (Shimotsuga, Japan), Junichi Koezuka (Tochigi, Japan) and Masami Jintyou (Shimotsuga, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To provide a semiconductor device that occupies a small area. The semiconductor device includes a first conductive layer, first to fifth insulating layers, and a second conductive layer that are...