US Patent Issued to Semiconductor Energy Laboratory on March 24 for "Display device having an oxide semiconductor transistor" (Japanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,585,158, issued on March 24, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Display device having an oxide semiconductor transistor" was invented by Toshikazu Kondo (Atsugi, Japan), Jun Koyama (Sagamihara, Japan) and Shunpei Yamazaki (Setagaya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurit...