ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,742, issued on March 17, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).
"Semiconductor device and method for manufacturing the same" was invented by Hajime Kimura (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a pixel electrode and a transistor which includes a first gate electrode, a first insulating layer over the first gate electrode, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a second gate electrode. The pixel electrode and the second gate electrode are provided over the second insulating layer. The first g...