US Patent Issued to Semiconductor Energy Laboratory on July 28 for "Semiconductor device comprising contact hole reaching semiconductor layer" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,489, issued on July 28, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device comprising contact hole reaching semiconductor layer" was invented by Masami Jintyou (Shimotsuga, Japan), Takahiro Iguchi (Nikko, Japan) and Rai Sato (Tochigi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a gate insulating layer, agate electrode, a first insulating l...