US Patent Issued to Semiconductor Energy Laboratory on July 21 for "Oxide semiconductor film and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,237, issued on July 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Oxide semiconductor film and semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Masashi Tsubuku (Atsugi, Japan), Kengo Akimoto (Atsugi, Japan), Hiroki Ohara (Sagamihara, Japan), Tatsuya Honda (Nigata, Japan), Takatsugu Omata (Isehara, Japan), Yusuke Nonaka (Atsugi, Japan), Masahiro Takahashi (Atsugi, Japan) and Akiharu Miyanaga (Tochigi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline regi...