ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,753, issued on July 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Memory device" was invented by Takanori Matsuzaki (Atsugi, Japan), Hiroki Inoue (Atsugi, Japan) and Yuki Okamoto (Ebina, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device that can be highly integrated is provided. The memory device includes a first transistor and a second transistor in a memory cell, and small-area vertical transistors each including a channel formation region on a side surface of an opening portion provided in an insulating layer are used as the two transistors. The memory cell includes a conductor having a function...