US Patent Issued to Semiconductor Energy Laboratory on Feb. 24 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,716, issued on Feb. 24, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Ryota Hodo (Kanagawa, Japan), Katsuaki Tochibayashi (Kanagawa, Japan) and Kentaro Sugaya (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a high on-state current is provided. An oxide film; a source electrode and a drain electrode over the oxide film; an interlayer insulating film covers the oxide film, the source electrode, and the drain electrode; a gate insulating film over the oxide film; a barrier insulating film over the oxid...