ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,755, issued on Feb. 24, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device and manufacturing method thereof" was invented by Shunpei Yamazaki (Tokyo), Sachiaki Tezuka (Atsugi, Japan), Haruyuki Baba (Isehara, Japan), Yuji Egi (Atsugi, Japan), Yasuhiro Jinbo (Isehara, Japan), Yujiro Sakurada (Atsugi, Japan) and Takeshi Aoki (Ebina, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a small variation in characteristics is provided. In a manufacturing method of a semiconductor device including a capacitor with reduced leak current, a first conductor is formed; a second insulator ...