ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,366, issued on Feb. 17, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Yoshihiro Komatsu (Kanagawa, Japan), Shota Mizukami (Hokkai, Japan), Shinobu Kawaguchi (Kanagawa, Japan), Hiromi Sawai (Kanagawa, Japan), Yasumasa Yamane (Kanagawa, Japan), Yuji Egi (Kanagawa, Japan), Yujiro Sakurada (Kanagawa, Japan) and Shinya Sasagawa (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide s...