US Patent Issued to Semiconductor Energy Laboratory on Aug. 11 for "Manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,624, issued on Aug. 11, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Manufacturing method of semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Motomu Kurata (Isehara, Japan), Tsutomu Murakawa (Isehara, Japan), Ryo Arasawa (Isehara, Japan), Kunihiro Fukushima (Isehara, Japan), Yasumasa Yamane (Atsugi, Japan) and Shinya Sasagawa (Chigasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a small variation in transistor characteristics can be provided. A step of forming an opening in a structure body including an oxide semiconductor device to reach the oxide semicond...