ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,448, issued on April 7, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Tomoaki Atsumi (Hedano, Japan), Kiyoshi Kato (Atsugi, Japan), Tatsuya Onuki (Atsugi, Japan) and Shunpei Yamazaki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a high on-state current and high operating speed is provided. The semiconductor device includes a transistor and a first circuit. The transistor includes a first gate and a second gate, and the first gate and the second gate include a region where they overlap each other with a semiconductor layer therebetween. The first ci...