ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,553, issued on April 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).
"Semiconductor device and electronic device" was invented by Shunpei Yamazaki (Tokyo), Hajime Kimura (Atsugi, Japan) and Takayuki Ikeda (Atsugi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that has lower power consumption and is capable of non-destructive reading is provided. The semiconductor device includes first to fourth transistors and first and second FTJ elements. The first FTJ element and the second FTJ element each include an input terminal, a tunnel insulating film, a dielectric, and an output terminal. ...