US Patent Issued to Semiconductor Energy Laboratory on April 14 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,536, issued on April 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Yoichi Iikubo (Tokyo), Daisuke Yamaguchi (Iwata, Japan) and Yuichi Yanagisawa (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device with a high yield is provided. In a semiconductor device including an oxide semiconductor over a substrate, when an insulator in contact with the oxide semiconductor, such as a gate insulator or an interlayer film, is deposited, the insulator can be deposited without diffusion of hydro...