ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,498, issued on April 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Memory device" was invented by Tatsuya Onuki (Atsugi, Japan), Kiyoshi Kato (Atsugi, Japan), Tomoaki Atsumi (Hadano, Japan) and Shunpei Yamazaki (Setagaya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A novel memory device is provided. The memory device includes a plurality of first wirings extending in a first direction, a plurality of memory element groups, and an oxide layer extending along a side surface of the first wiring. Each of the memory element groups includes a plurality of memory elements. Each of the memory elements includes a fi...